平特一肖高手论坛免费提供|预测下期平特肖公式规律

 

 
  •   
  •   
  •   
  •  
Your present location:News -> Trade News -> Vishay Intertechnology Expands its 650 V N-Channel Power MOSFET Series With 23 New Devices Offering On-Resistance Down to 30 mΩ and Currents From 6 A to 105 A

Vishay Intertechnology Expands its 650 V N-Channel Power MOSFET Series With 23 New Devices Offering On-Resistance Down to 30 mΩ and Currents From 6 A to 105 A

Date:2013年5月22日 09:15

 

MALVERN, PENNSYLVANIA — May 22, 2013 — Vishay Intertechnology, Inc. (NYSE: VSH) today added additional 650 V power MOSFETs to its E Series family of devices. These 22 new devices in eight different packages offer an extended on-resistance range from 30 mΩ to 600 mΩ at 10 V, and broaden its maximum current ratings from 6 A to 105 A. Based on the next generation of Vishay Siliconix Super Junction Technology, the 650V E Series MOSFETs allow the Company to offer extended head room for applications that require additional input voltage safety margin in its renewable, industrial, lighting, telecommunications, consumer, and computing markets.

The devices introduced today bring the total number of 650 V E SeriesMOSFETS to 26. All E Series devices offer ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including power factor correction, server and telecom power systems, welding, uninterruptable power supplies (UPS), battery chargers, LED lighting, semiconductor capital equipment, adaptors, and solar inverters.

The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100 % UIS testing. The MOSFETs are RoHS-compliant.

Device Specification Table:

Part Number V(BR)DSS(V) ID @ 25C(A) RDS(ON)max. @ Vgs = 10 V (mΩ) Qgtyp @ Vgs = 10V (nC) Package Samples
SiHP6N65E 650 6 600 21 TO220 Released
SiHF6N65E 650 6 600 21 TO220F Released
SiHB6N65E 650 6 600 21 TO263 (D2PAK) Released
SiHD6N65E 650 6 600 21 TO252 (DPAK) Released
SiHU6N65E 650 6 600 21 TO251 (IPAK) Released
SiHP12N65E 650 12 380 33 TO220 Available
SiHB12N65E 650 12 380 33 TO263 (D2PAK) Available
SiHF12N65E 650 12 380 33 TO220F Available
SiHP15N65E 650 15 280 44 TO220 Released
SiHB15N65E 650 15 280 44 TO263 (D2PAK) Released
SiHF15N65E 650 15 280 44 TO220F Released
SiHP22N65E 650 22 180 65 TO220 Released
SiHF22N65E 650 22 180 65 TO220F Released
SiHB22N65E 650 22 180 65 TO263 (D2PAK) Released
SiHG22N65E 650 22 180 65 TO247AC Released
SiHP24N65E 650 24 150 83 TO220 Released
SiHB24N65E 650 24 150 83 TO263 (D2PAK) Released
SiHG24N65E 650 24 150 83 TO247AC Released
SiHP28N65E 650 28 125 99 TO220 May
SiHG28N65E 650 28 125 99 TO247AC May
SiHW28N65E 650 28 125 99 TO247AD May
SiHG47N65E 650 47 70 178 TO247AC Available
SiHW47N65E 650 47 70 178 TO247AD Available
SiHG64N65E 650 65 51 244 TO247AC May
SiHW64N65E 650 65 51 244 TO247AD May
SiHS105N65E 650 105 30 405 Super TO247 May

Samples of these new power MOSFETs are available today, with lead times of 16 to 17 weeks for production orders.

 

平特一肖高手论坛免费提供
河北时时彩怎么玩 福建36选7开奖走势图17141期 北京赛车推荐号坑人 老11选5块彩乐 印尼二分彩走势 香港六合彩内部高级机密绝封四码书 极速十一选五直选 十一运夺金任八 足球指数百家欧赔 一肖中特大公开 澳洲幸运10开奖直播 山东11选5计划遗漏 黑龙江36选7开奖查询结果 甘肃11选5前三直选遗漏 四川金7乐遗漏号房产